Method And System For A Pseudo-Differential Low-Noise Amplifier At Ku-Band

ABSTRACT

Methods and systems for a pseudo-differential low-noise amplifier at Ku-band may comprise a low-noise amplifier (LNA) integrated on a semiconductor die, where the LNA comprises differential pair transistors with an embedded inductor tail integrated on the semiconductor die. The embedded inductor tail may comprise: a first inductor with a first terminal capacitively-coupled to a gate terminal of a first transistor of the differential pair transistors and a second terminal of the first inductor coupled to second, third, and fourth inductors. The second inductor may be coupled to a source terminal of the first transistor of the differential pair transistors, the fourth inductor may be coupled to a source terminal of the second transistor of the differential pair transistors, and the third inductor may be capacitively-coupled to a gate terminal of the second transistor of the differential pair transistors and also to ground. The second inductor may be embedded within the first inductor.

CROSS-REFERENCE TO RELATED APPLICATIONS/INCORPORATION BY REFERENCE

This application is a continuation of U.S. patent application Ser. No.14/260,214 filed on Apr. 23, 2014, which makes reference to and claimspriority to U.S. Provisional Application Ser. No. 61/815,318 filed onApr. 24, 2013. The above identified application is hereby incorporatedherein by reference in its entirety.

FIELD

Certain embodiments of the invention relate to semiconductor devices.More specifically, certain embodiments of the invention relate to amethod and system for a pseudo-differential low-noise amplifier atKu-band.

BACKGROUND

Complementary metal oxide semiconductor (CMOS) transistors areubiquitous in today's electronics devices, and are often used inlow-noise amplifiers for radio frequency (RF) applications.

Further limitations and disadvantages of conventional and traditionalapproaches will become apparent to one of skill in the art, throughcomparison of such systems with the present invention as set forth inthe remainder of the present application with reference to the drawings.

BRIEF SUMMARY

A system and/or method for a pseudo-differential low-noise amplifier atKu-band substantially as shown in and/or described in connection with atleast one of the figures, as set forth more completely in the claims.

Various advantages, aspects and novel features of the present invention,as well as details of an illustrated embodiment thereof, will be morefully understood from the following description and drawings.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a diagram illustrating an example receiver with apseudo-differential low-noise-amplifier, in accordance with an exampleembodiment of the disclosure.

FIG. 2 is a schematic of an example pseudo-differential low-noiseamplifier, in accordance with an example embodiment of the disclosure.

FIG. 3 illustrates an example impedance matching and electro-staticdischarge structure for a pseudo-differential low-noise amplifier, inaccordance with an example embodiment of the disclosure.

FIG. 4 illustrates an example layout of a pseudo-differential low-noiseamplifier, in accordance with an example embodiment of the disclosure.

DETAILED DESCRIPTION

Certain aspects of the disclosure may be found in a pseudo-differentiallow-noise amplifier at Ku-band. Exemplary aspects of the invention maycomprise a low-noise amplifier (LNA) integrated on a semiconductor die,where the LNA comprises differential pair transistors with an embeddedinductor tail integrated on the semiconductor die. The embedded inductortail may comprise: a first inductor with a first terminalcapacitively-coupled to a gate terminal of a first transistor of thedifferential pair transistors and a second terminal of the firstinductor coupled to second, third, and fourth inductors. The secondinductor may be coupled to a source terminal of the first transistor ofthe differential pair transistors, the fourth inductor may be coupled toa source terminal of the second transistor of the differential pairtransistors, and the third inductor may be capacitively-coupled to agate terminal of the second transistor of the differential pairtransistors and also to ground. The second inductor may be embeddedwithin the first inductor, and the fourth inductor may be embeddedwithin the third inductor. Cascode transistors may be coupled to drainterminals of the differential pair transistors. The cascode transistorsmay have inductive loads comprising inductors integrated on thesemiconductor die. The differential pair transistors and the cascodetransistors may comprise complementary metal-oxide semiconductor (CMOS)transistors. The first inductor may be capacitively-coupled to the gateof the first transistor of the differential pair transistors and thefourth inductor may be capacitively-coupled to the gate of the secondtransistor of the differential pair transistors utilizing CMOScapacitors. The LNA may receive a single-ended signal and generate adifferential output signal. The embedded inductor tail may provideelectro-static discharge (ESD) protection for the LNA. The semiconductordie may be bonded to a packaging substrate.

As utilized herein, “and/or” means any one or more of the items in thelist joined by “and/or”. As an example, “x and/or y” means any elementof the three-element set {(x), (y), (x, y)}. As another example, “x, y,and/or z” means any element of the seven-element set {(x), (y), (z), (x,y), (x, z), (y, z), (x, y, z)}. As utilized herein, the terms “block”and “module” refer to functions than can be implemented in hardware,software, firmware, or any combination of one or more thereof. Asutilized herein, the term “exemplary” means serving as a non-limitingexample, instance, or illustration. As utilized herein, the term “e.g.,”introduces a list of one or more non-limiting examples, instances, orillustrations.

FIG. 1 is a diagram illustrating an example receiver with apseudo-differential low-noise-amplifier, in accordance with an exampleembodiment of the disclosure. Referring to FIG. 1, there is shown areceiver 100 comprising a pseudo-differential low-noise amplifier (LNA)101, in-phase (I) and quadrature (Q) mixers 103A and 103B, localoscillator signals LO_I and LO_Q, gain stages 107A and 107B,analog-to-digital converters (ADCs) 109A and 109B, and a processingmodule 111. There is also shown an input signal RF IN.

The LNA 101 may be operable to provide amplification to the input signalRF IN with the amplified signal being communicated to the mixers 103Aand 103B. The LNA 101 may comprise a pseudo-differential LNA in that asingle-ended input signal received by the LNA 101 may be output as anamplified differential signal without the need for a balun to convert toa differential signal. The differential output signal may becommunicated to the I and Q mixers 103A and 103B.

The mixers 103A and 103B may comprise circuitry that is operable togenerate output signals at frequencies that are the sum and thedifference between the input RF signal RF In and the local oscillatorsignal, which comprises either LO_I or LO_Q. The signal RF In may bedown-converted to in-phase and quadrature signals in the receiver 100utilizing the 90 degree phase difference LO signals LO_I and LO_Q. Thefrequency of LO_I and LO_Q may be configured such that it is centeredwithin desired channels. The local oscillators signals LO_I and LO_Q maybe generated by voltage-controlled oscillators in a phase-locked loop,for example, where the frequency of oscillation may be configured by acontrol voltage.

The low-pass filters 105A and 105B may comprise circuitry that isoperable to attenuate signals above a corner frequency and allow signalsbelow the corner frequency to pass. In this manner, sum frequencysignals from the mixers 103A and 103B may be filtered while differencefrequency signals may be allowed to pass through to the gain modules107A and 107B.

The gain modules 107A and 107B may comprise amplifiers for amplifyingthe down-converted and filtered signals. The gain modules 107A and 107Bmay comprise configurable gain levels, and may be controlled by theprocessing module 111, for example. In another example scenario, the LNA101 may comprise a conventional single-ended LNA and the gain modules107A and 107B may comprise pseudo-differential LNAs, as described forthe LNA 101 above.

The ADCs 109A and 109B may comprise circuitry that is operable toconvert analog input signals to digital output signals. Accordingly, theADCs 109A and 109B may receive baseband analog signals from the gainmodules 107A and 107B and may generate digital signals to becommunicated to the processing module 111. In another example scenariowhere the input signal, RF IN, is a digital signal, the ADCs 109A and109B would then not be needed, and the processing of received signalswould be in the digital domain.

The processing module 111 may comprise a processor that is operable tocontrol the functions of the receiver 200 and may process receivedbaseband signals to demodulate, deinterlace, and/or perform otherprocessing techniques to the data.

In an example scenario, the receiver 100 may be operable to receive andprocess signals in the Ku-band, in the 10-18 GHz range, for example,where an inductive tail may be utilized for differential pairtransistors in the LNA 101, as opposed to an active tail with its highcapacitance or a resistive tail with its large voltage drop. Inaddition, for proper differential mode operation with signal balance atthe output, impedances should be matched at the inputs to differentialpairs in the LNA, which is enabled by the inductive tail circuitry asshown in FIGS. 2-4.

FIG. 2 is a schematic of an example pseudo-differential low-noiseamplifier, in accordance with an example embodiment of the disclosure.Referring to FIG. 2, there is shown a pseudo-differential LNA 200 thatis integrated on a die 201 and a packaging substrate 203. The die 201may comprise a CMOS integrated circuit, for example, but is notnecessarily limited to CMOS as other technology transistors may be used,including compound semiconductor or organic circuits. The LNA 200 may beconsidered “pseudo-differential” in that it may receive a single-endedinput and generate a differential output, which is achieved without theuse of a balun.

The die 201 may be bonded to the packaging substrate utilizing aconductive paste or epoxy, which provides a conductive path to thesubstrate in which the devices in the die 201 are integrated. The die201 may comprise active devices such as the CMOS transistors M_(P),M_(N), Cas_(P), and Cas_(N), and passive devices such as the capacitorsC_(P), C_(N), C_(OUTP), C_(OUTN), and C_(B), and inductors L_(loadP),L_(loadN), L_(shunt), L_(P), L_(N), and L_(tail). The capacitors C_(P),C_(N), C_(OUTP), C_(OUTN), and C_(B) may comprise CMOS capacitors, i.e.CMOS transistors with coupled source and drain, or parallel platecapacitor structures, for example. The inductor L_(Sub) may comprise amodeling inductance representing the packaging substrate inductance.

The CMOS transistors M_(P) and M_(N) may comprise the differential pairinput to the LNA 200 and the drain terminals of the CMOS cascodetransistors Cas_(P) and Cas_(N) may provide the differential output ofthe LNA 200 through the output capacitors C_(OUTP) and C_(OUTN). Thegate terminals of the differential pair transistors may be biased by thebias voltages Bias_(P) and Bias_(N) to configure the transistors M_(P)and M_(N) in the desired mode, while V_(DD) and ground may be suppliedvia the bond wires 207B and 207C/207D, respectively.

The input capacitors C_(P) and C_(N) may provide capacitive coupling,i.e., AC-coupling, to the differential pair transistors M_(P) and M_(N).The gate of the CMOS transistor M_(N) may be coupled to ground throughC_(N) via the bond wires 207C and 207D, while the gate of the CMOStransistor M_(P) may receive the input signal, illustrating thesingle-ended input configuration of the LNA 200.

The input signal may be supplied by the voltage supply V_(IN) via theinput resistor R_(IN) and the matching filter 205, which may comprise aband-pass or notch-pass filter operable to remove unwanted signals whileallowing a desired signal or signals to pass. In addition, the matchingcircuit 205 may comprise impedance matching capability for matching theimpedance of the source of the input signal, V_(IN) and R_(IN), to theLNA 200, for improved input signal power transfer of the input signal tothe LNA 200.

As stated above, an inductive tail may be preferred for differentialpairs operating in the Ku-band, as an active tail current source wouldhave a high capacitance associated with it, and a resistive tail wouldexcessive voltage drop. When no balun is present in the signal path,single-ended to differential conversion may be realized by connectingone of the inputs of the differential pair to AC ground.

In order to have a good signal balance at the output of a differentialamplifier, it is important to have the same impedance matching networkat both the inputs. Therefore, in an example embodiment of thedisclosure, the inductors L_(shunt), L_(P), L_(N), and L_(tail)comprising an embedded inductor tail 210 may be integrated together onthe die 201 for highly reproducible uniformity, and in instances ofinductively coupled pairs, such as L_(tail)/L_(N) and L_(shunt)/L_(P),may be integrated one within the other, i.e. embedded inductors. Forexample, L_(P) may be embedded within L_(shunt) while L_(N) may beembedded within L_(tail), as illustrated by the mutual inductance arrowsin FIG. 2, and shown further with respect to FIG. 4.

This embedded integration of nominally identical inductor pairs providesthe same matching network at both the inputs of the differential pairM_(P) and M_(N), which improves the differential nature, such ascommon-mode rejection ratio and signal magnitude and phase match, of thesignal at the outputs O_(utP) and O_(utN) of the LNA 200. In addition toproviding a low impedance connection to the LNA 200, the inductorscomprising the bond wires 207A-207D and the inductors L_(tail)/L_(N) andL_(shunt)/L_(P) may provide electro-static discharge (ESD) protectionfor the LNA 200, shorting high voltage spikes to ground as well asresisting large current spikes.

In operation, a Ku-band signal may be generated by voltage sourceV_(IN), filtered by the matching filter 205, and communicated to the die201 via the bond wire 207A and capacitively-coupled to the inputtransistor M_(P) of the LNA 200. The embedded inductor tail 210 mayshunt any voltage spikes to ground, thereby providing ESD protection tothe LNA 200. In addition, the embedded inductor tail provides ahigh-frequency tail for the LNA 210 with excellent differential outputperformance due to the matched embedded coils L_(tail)/L_(N) andL_(shunt)/L_(P).

The cascode configuration of transistors Cas_(P) and Cas_(N) may providea high output resistance for the differential pairs M_(P) and M_(N). Thecascode transistors CasP and CasN may be biased at V_(DD). The output ofthe LNA 200, at Out_(P) and Out_(N), may be a differential signal thatis AC-coupled out of the LNA 200 by the output capacitors C_(OUTP) andC_(OUTN). While the LNA 200 may be tuned for Ku-band operation, it isnot so limited and may be used at any desired frequency as determined byLNA bandwidth and input impedances utilized, for example.

FIG. 3 illustrates an example impedance matching and electro-staticdischarge structure for a pseudo-differential low-noise amplifier, inaccordance with an example embodiment of the disclosure. Referring toFIG. 3, there is shown a differential pair M_(P) and M_(N) with inputcapacitors C_(P) and C_(N) for AC-coupling, i.e., capacitive-coupling.The coupling capacitor C_(N) may be coupled to ground while C_(P)provides an input terminal for the circuit.

The inductor pairs L_(tail)/L_(N) and L_(shunt)/L_(P) may be integratedand co-located on a semiconductor die, with L_(P) embedded in L_(shunt)and L_(N) embedded in L_(tail), as described with respect to FIG. 2 andshown further in FIG. 4. In this configuration, the input impedance seenat RF IN may be given by:

${{Re}\left\{ Z_{in} \right\}} \approx \frac{2*k*g_{m}}{n}$

where g_(m) is the transconductance of the differential pairtransistors, and k is the mutual inductance factor of the inductorpairs, and n is the turns ratio of the inductor pairs. With equivalentturns ratio n, transistor transconductance, and mutual inductance of theinductor pairs as afforded by embedding inductors adjacent on the samedie, the differential performance may be greatly increased overconventional LNA designs. While the LNA disclosed may be tuned forKu-band operation, it is not so limited and may be used at any desiredfrequency as determined by LNA bandwidth and input impedances utilized,for example.

FIG. 4 illustrates an example layout of a pseudo-differential low-noiseamplifier, in accordance with an example embodiment of the disclosure.Referring to FIG. 4, there is shown LNA 400 integrated on a die 401,which may be bonded to a packaging substrate 403. FIG. 4 also shows bondwires 407A-407C and bond pads 411A-411C for providing electrical contactto the die 401. The die 401 may comprise a CMOS integrated circuit, forexample, but is not necessarily limited to CMOS as other technologytransistors may be used, including compound semiconductor or organiccircuits.

The die 401 may be bonded to the packaging substrate utilizing aconductive paste or epoxy that provides a conductive path to thesubstrate in which the devices in the die 401 are integrated. The die401 may comprise active devices such as the CMOS transistors M_(P),M_(N), CaS_(P), and Cas_(N), and passive devices such as the capacitorsC_(P), C_(N), C_(OUTP), and C_(OUTN), and inductors L_(loadP),L_(loadN), L_(shunt), L_(P), L_(N), and L_(tail).

The CMOS transistors M_(P) and M_(N) may comprise the differential pairinput to the LNA 400 and the drain terminals of the CMOS cascodetransistors Cas_(P) and Cas_(N) may provide the differential output ofthe LNA 400 through the output capacitors C_(OUTP) and C_(OUTN). Thegate, source, and drain terminals of the CMOS transistors are labeled G,S, and D, respectively. The supply voltage V_(DD) may be supplied viathe wire bond 407B coupled to the bond pad 411B and ground may besupplied via the wire bond 407C to the substrate 403.

The layout shown in FIG. 4 is a simplified layout schematic, where therelative sizes of the structures are not necessarily to scale, and forsome structures may be exaggerated for clarity purposes. Similarly, thespaces between devices may also be exaggerated for clarity. The inductorpairs L_(shunt)/L_(P) and L_(N)/L_(tail) illustrate the co-located, orembedded inductor integration where one inductor of each pair isembedded within the other inductor of the pair. Since these inductorpairs and capacitors C_(P) and C_(N) are located in close proximity onthe die 401 (the differential pair CMOS transistors M_(P) and M_(N) areexaggerated in size exaggerating the distance between the inductorpairs), the impedances on each side of the differential pair may beessentially equivalent, providing improved differential performance.

In an example scenario, FIG. 4 illustrates a possible layout for the LNA200 described in FIG. 2. Accordingly, a terminal of the input capacitorsC_(P) and C_(N) may be coupled to the gate terminals of the differentialpair CMOS transistors M_(P) and M_(N) and the drain terminals of M_(P)and M_(N) may be coupled to the source terminals of the CMOS cascodetransistors Cas_(P) and Cas_(N).

The second terminal of capacitor C_(N) may be coupled to the inductorL_(tail) and the bond pad 411C, which may be coupled to ground via thebond wires 407C and 407D and bond pad 411D. The source terminals of thedifferential pair CMOS transistors M_(P) and M_(N) may be coupled tofirst terminals of the embedded inductors L_(P) and L_(N). The secondterminal of Inductor LP may be coupled to inductors L_(shunt), L_(tail),and L_(N).

The gate terminals of the CMOS cascode transistors Cas_(P) and Cas_(N)may be coupled to the bond pad 411B for biasing the gates using thesupply voltage V_(DD). The drain terminals of the CMOS cascodetransistors Cas_(P) and Cas_(N) may be coupled to the load inductorsL_(loadP) and L_(loadN) and to the output capacitors C_(outP) andC_(outN). The load inductors L_(loadP) and L_(loadN) may also be coupledto V_(DD).

The arrangement of capacitors, CMOS transistors, and embedded inductorsin close proximity may provide improved differential performance of theLNA 400. In addition, the shunt arrangement of the inductors at theinputs of the LNA 400, and as illustrated for the LNAs 200 and 300 inFIGS. 2 and 3, provide ESD protection for the LNA. While the LNA 400 maybe tuned for Ku-band operation, it is not so limited and may be used atany desired frequency as determined by LNA bandwidth and inputimpedances utilized, for example.

In an embodiment of the disclosure, a method and system may comprise alow-noise amplifier (LNA) integrated on a semiconductor die, where theLNA comprises differential pair transistors with an embedded inductortail integrated on the semiconductor die. The embedded inductor tail maycomprise: a first inductor with a first terminal capacitively-coupled toa gate terminal of a first transistor of the differential pairtransistors and a second terminal of the first inductor coupled tosecond, third, and fourth inductors.

The second inductor may be coupled to a source terminal of the firsttransistor of the differential pair transistors, the fourth inductor maybe coupled to a source terminal of the second transistor of thedifferential pair transistors, and the third inductor may becapacitively-coupled to a gate terminal of the second transistor of thedifferential pair transistors and also to ground. The second inductormay be embedded within the first inductor, and the fourth inductor maybe embedded within the third inductor. Cascode transistors may becoupled to drain terminals of the differential pair transistors.

The cascode transistors may have inductive loads comprising inductorsintegrated on the semiconductor die. The differential pair transistorsand the cascode transistors may comprise complementary metal-oxidesemiconductor (CMOS) transistors. The first inductor may becapacitively-coupled to the gate of the first transistor of thedifferential pair transistors and the fourth inductor may becapacitively-coupled to the gate of the second transistor of thedifferential pair transistors utilizing CMOS capacitors. The LNA mayreceive a single-ended signal and generate a differential output signal.The embedded inductor tail may provide electro-static discharge (ESD)protection for the LNA. The semiconductor die may be bonded to apackaging substrate.

Other embodiments may provide a non-transitory computer readable mediumand/or storage medium, and/or a non-transitory machine readable mediumand/or storage medium, having stored thereon, a machine code and/or acomputer program having at least one code section executable by amachine and/or a computer, thereby causing the machine and/or computerto perform the steps as described herein for a pseudo-differentiallow-noise amplifier at Ku-band.

Accordingly, aspects of the invention may be realized in hardware,software, firmware or a combination thereof. The invention may berealized in a centralized fashion in at least one computer system or ina distributed fashion where different elements are spread across severalinterconnected computer systems. Any kind of computer system or otherapparatus adapted for carrying out the methods described herein issuited. A typical combination of hardware, software and firmware may bea general-purpose computer system with a computer program that, whenbeing loaded and executed, controls the computer system such that itcarries out the methods described herein.

One embodiment may be implemented as a board level product, as a singlechip, application specific integrated circuit (ASIC), or with varyinglevels integrated on a single chip with other portions of the system asseparate components. The degree of integration of the system willprimarily be determined by speed and cost considerations. Because of thesophisticated nature of modern processors, it is possible to utilize acommercially available processor, which may be implemented external toan ASIC implementation of the present system. Alternatively, if theprocessor is available as an ASIC core or logic block, then thecommercially available processor may be implemented as part of an ASICdevice with various functions implemented as firmware.

The present invention may also be embedded in a computer programproduct, which comprises all the features enabling the implementation ofthe methods described herein, and which when loaded in a computer systemis able to carry out these methods. Computer program in the presentcontext may mean, for example, any expression, in any language, code ornotation, of a set of instructions intended to cause a system having aninformation processing capability to perform a particular functioneither directly or after either or both of the following: a) conversionto another language, code or notation; b) reproduction in a differentmaterial form. However, other meanings of computer program within theunderstanding of those skilled in the art are also contemplated by thepresent invention.

While the invention has been described with reference to certainembodiments, it will be understood by those skilled in the art thatvarious changes may be made and equivalents may be substituted withoutdeparting from the scope of the present invention. In addition, manymodifications may be made to adapt a particular situation or material tothe teachings of the present invention without departing from its scope.Therefore, it is intended that the present invention not be limited tothe particular embodiments disclosed, but that the present inventionwill include all embodiments falling within the scope of the appendedclaims.

What is claimed is:
 1. A semiconductor device, the device comprising: alow-noise amplifier (LNA) integrated on a semiconductor die, the LNAcomprising differential pair transistors with embedded inductorsintegrated on the semiconductor die, wherein the embedded inductorscomprise: a first inductor with a first terminal capacitively-coupled toa gate terminal of a first transistor of the differential pairtransistors and a second terminal of the first inductor coupled tosecond, third, and fourth inductors, wherein the second inductor iscoupled to a source terminal of the first transistor of the differentialpair transistors, the fourth inductor is coupled to a source terminal ofa second transistor of the differential pair transistors, and the thirdinductor is capacitively-coupled to a gate terminal of the secondtransistor of the differential pair transistors.
 2. The device accordingto claim 1, wherein the second inductor is embedded within the firstinductor.
 3. The device according to claim 1, wherein the fourthinductor is embedded within the third inductor.
 4. The device accordingto claim 1, wherein cascode transistors are coupled to drain terminalsof the differential pair transistors.
 5. The device according to claim4, wherein the cascode transistors have inductive loads comprisinginductors integrated on the semiconductor die.
 6. The device accordingto claim 4, wherein the differential pair transistors and the cascodetransistors comprise complementary metal-oxide semiconductor (CMOS)transistors.
 7. The device according to claim 1, wherein the firstinductor is capacitively-coupled to the gate of the first transistor ofthe differential pair transistors and the fourth inductor iscapacitively-coupled to the gate of the second transistor of thedifferential pair transistors utilizing CMOS capacitors.
 8. The deviceaccording to claim 1, wherein the LNA is operable to receive asingle-ended signal and generate a differential output signal.
 9. Thedevice according to claim 1, wherein the embedded inductors is operableto provide electro-static discharge (ESD) protection for the LNA. 10.The device according to claim 1, wherein the semiconductor die is bondedto a packaging substrate.
 11. A method for communication, the methodcomprising: in a low-noise amplifier (LNA) integrated on a semiconductordie, the LNA comprising differential pair transistors with embeddedinductors integrated on the semiconductor die, amplifying a radiofrequency (RF) signal, wherein the embedded inductors comprise: a firstinductor with a first terminal capacitively-coupled to a gate terminalof a first transistor of the differential pair transistors and a secondterminal of the first inductor coupled to second, third, and fourthinductors, wherein the second inductor is coupled to a source terminalof the first transistor of the differential pair transistors, the fourthinductor is coupled to a source terminal of a second transistor of thedifferential pair transistors, and the third inductor iscapacitively-coupled to a gate terminal of the second transistor of thedifferential pair transistors.
 12. The method according to claim 11,wherein the second inductor is embedded within the first inductor. 13.The method according to claim 11, wherein the fourth inductor isembedded within the third inductor.
 14. The method according to claim11, wherein cascode transistors are coupled to drain terminals of thedifferential pair transistors.
 15. The method according to claim 14,wherein the cascode transistors have inductive loads comprisinginductors integrated on the semiconductor die
 16. The method accordingto claim 14, wherein the differential pair transistors and the cascodetransistors comprise complementary metal-oxide semiconductor (CMOS)transistors.
 17. The method according to claim 11, wherein the firstinductor is capacitively-coupled to the gate of the first transistor ofthe differential pair transistors and the fourth inductor iscapacitively-coupled to the gate of the second transistor of thedifferential pair transistors utilizing CMOS capacitors.
 18. The methodaccording to claim 17, comprising generating a differential outputsignal from the received RF signal using the LNA.
 19. The methodaccording to claim 11, comprising electro-static discharge (ESD)protection for the LNA utilizing the embedded inductors.
 20. Asemiconductor device comprising: a low-noise amplifier (LNA) integratedon a complementary metal-oxide semiconductor (CMOS) die, the LNAcomprising differential pair transistors with embedded inductorsintegrated on the semiconductor die, wherein the embedded inductorscomprise: a first inductor with a first terminal capacitively-coupled toa gate terminal of a first transistor of the differential pairtransistors and a second terminal of the first inductor coupled tosecond, third, and fourth inductors, wherein the second inductor iscoupled to a source terminal of the first transistor of the differentialpair transistors, the fourth inductor is coupled to a source terminal ofthe second transistor of the differential pair transistors, the thirdinductor is capacitively-coupled to a gate terminal of a secondtransistor of the differential pair transistors, and wherein adifferential output of the LNA is provided at drain terminals of cascodetransistors coupled to drain terminals of the differential pairtransistors.